30纳米以下互连的金属化:不同衬里/种子组合的比较

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090387

L. Carbonell, H. Volders, N. Heylen, K. Kellens, R. Caluwaerts, K. Devriendt, E. Sanchez, J. Wouters, V. Gravey, K. Shah, Qian Luo, A. Sundarrajan, J. Lu, J. Aubuchon, P. Ma, M. Narasimhan, A. Cockburn, Z. Tokei, G. Beyer

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引用次数: 6

摘要

使用牺牲FIN方法在氧化物中绘制临界尺寸低至17 nm的窄沟槽，并用于评估TaN/Ta, RuTa, TaN + Co和MnOx金属化方案的可扩展性。到目前为止，RuTa金属化方案已被证明是最有希望成功实现25纳米互连金属化的候选方案，它提供了高电产率，并且与CMP过程中使用的浆料具有良好的兼容性。

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Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations

Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.

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2009 IEEE International Interconnect Technology Conference

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