si调制掺杂改善InGaAs/GaAs量子点太阳能电池性能

COMMAD 2012 Pub Date : 2012-12-01 DOI:10.1109/COMMAD.2012.6472393

H. F. Lu, L. Fu, G. Jolley, H. Tan, C. Jagadish

{"title":"si调制掺杂改善InGaAs/GaAs量子点太阳能电池性能","authors":"H. F. Lu, L. Fu, G. Jolley, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472393","DOIUrl":null,"url":null,"abstract":"N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping\",\"authors\":\"H. F. Lu, L. Fu, G. Jolley, H. Tan, C. Jagadish\",\"doi\":\"10.1109/COMMAD.2012.6472393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.\",\"PeriodicalId\":136573,\"journal\":{\"name\":\"COMMAD 2012\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COMMAD 2012\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2012.6472393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在两种不同掺杂浓度的InGaAs/GaAs量子点太阳能电池(QDSC)的势垒层中引入了n型硅调制掺杂。由于活性结构中额外的电子居群，调制掺杂器件的能量转换效率提高了8.91%，而未掺杂样品的能量转换效率为6.95%。

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Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping

N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.

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COMMAD 2012

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