通过EDX, XPS和ToFSIMS分析评估NSOP(不粘接垫)键合垫

Lai Chin Yung, Ho Ing Hong, C. C. Fei
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引用次数: 0

摘要

NSOP缺陷是集成电路封装装配厂面临的常见缺陷。导线键合工艺不能将导线球头键合在硅片键合垫表面时,通常发生失效模式。在本分析中,观察到金丝焊在金键焊垫上的局部NSOP缺陷。FESEM和EDX的初步表面分析检查已经完成,并确认不能排除NSOP故障与污染问题或工艺有关。然而,使用FESEM / EDX分析工具,由于缺陷垫和良好垫之间的结果没有差异,NSOP缺陷的真正根本原因仍然没有得到解决。为了更深入地理解NSOP现象,我们使用了XPS和ToFSIMS等表面敏感分析工具进行分析。XPS初步结果表明,由于等离子体清洗过程引起键垫表面极性变化,导致周围污染物的吸收/再沉积,因此高度怀疑NSOP缺陷。为了进一步加强上述假设,我们还进行了ToFSIMS分析来证明XPS分析的发现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Assessing the NSOP (non stick on pad) bond pad by EDX, XPS and ToFSIMS analysis
NSOP defect is a common defect faced by IC packaging assembly house. The failure modes normally happen when the wire bond process is not able to bond the wire ball head on the silicon chip bond pad surface. In this analysis, the localized NSOP defect had been observed with the gold wire bonding process on gold bond pad itself. Preliminary surface analysis inspections by FESEM and EDX have been done and confirmed that the NSOP failure is cannot rule out is related to contamination issues or process. However, with the FESEM / EDX analytical tool, the real root cause of the NSOP defect still remains unresolved due to no differences in the results between the defect pad and good pad. To deeply understand the NSOP phenomena, surface sensitive analytical tools such as XPS and ToFSIMS have been applied in this analysis. XPS preliminary results finding showed that the NSOP defect is highly suspected due to the plasma cleaning process inducing bond pad surface polarity change and contributing to absorption / re-deposition of contaminate from surrounding. To further strengthen the hypothesis as mentioned, ToFSIMS analysis has also been carried out to prove the finding as observed from XPS analysis.
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