半导体制造中各种良率问题辨识与分析的新方法

Chang Huhn Lee, Jae Yun Moon, Kyu Whan Chong, Hyung Dong Woo, Seog Hee Kang, Kyung Seok Oh, Seok Woo Hong, Jae Cheol Lee
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引用次数: 1

摘要

在半导体加工过程中会产生大量的数据,因此将大量晶圆分类为各种类型的故障以尽快分析良率偏移的根本原因变得更加重要。本文提出了基于特征向量的晶圆分类方法及其在根本原因分析中的应用。计算了局部bin配置文件以生成晶圆片的特征向量。采用k均值聚类方法对这些向量进行聚类,用于晶圆的分类。ANOVA或Kruscal-Wallis检验已应用于产率分析的特征向量的一个组成部分,取决于其正态性。我们的良率分析实例证明,这些分析方法在确定各种故障的根本原因方面是非常有效和快速的,特别是设备引起的故障,包括那些用传统方法无法实现的故障
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Methods for Identification and Analysis of Various Yield Problems in Semiconductor Manufacturing
Overwhelming data is produced during semiconductor processing and it becomes more important to classify a large number of wafers into various types of failures for the root cause analysis of the yield excursion as quickly as possible. In this paper, feature vector based methods have been suggested for the classification of wafers and their application to the root cause analysis. Local bin profile has been calculated to generate a feature vector for a wafer. K-means clustering method has been used to cluster these vectors for the classification of wafers. ANOVA or Kruscal-Wallis test has been applied to one of the components of a feature vector for the yield analysis, depending on its normality. Our yield analysis examples have proven that these analysis methods are very effective and quick in pinpointing the root cause for the various types of failures, especially the equipment-originated ones, including those otherwise would be impossible with the conventional methods
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