F. Dubecký, J. Darmo, J. Betkó, G. Papaioannou, V. Ioannou, M. Baurngartner
{"title":"用瞬态光谱技术研究未掺杂半绝缘低碳砷化镓的深层受体态","authors":"F. Dubecký, J. Darmo, J. Betkó, G. Papaioannou, V. Ioannou, M. Baurngartner","doi":"10.1109/SIM.1992.752707","DOIUrl":null,"url":null,"abstract":"Deep states in undoped semi-insulating GaAs with low carbon content were investigated by PICTS and Photo-DLTS. Hall and Photo-Hall measurements proved that peaks observed in Photo-DLTS spectra are due to the electron emission from deep donor states. Other peaks obtained in PICTS spectra were attributed to the hole emission from acceptor states with the apparent energy levels E/sub pa/ /spl ap/ 0.18, 0.19, 0.21, 0.5 eV. A minimal value of their total concentration except of 0.5 eV level was estimated at about 1x10/sup 15/ cm/sup -3/. The peak of 0.5 eV level with dominant amplitude in detected spectra correlates with the hole emission from EL2/sup +/++/ double donor state. The 0.19 and 0.21 levels are most probably related to the double acceptor Ga/sub As/ antisite.defect.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study of deep acceptor states in undoped Semi-insulating GaAs with low carbon content by transient spectroscopy techniques\",\"authors\":\"F. Dubecký, J. Darmo, J. Betkó, G. Papaioannou, V. Ioannou, M. Baurngartner\",\"doi\":\"10.1109/SIM.1992.752707\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep states in undoped semi-insulating GaAs with low carbon content were investigated by PICTS and Photo-DLTS. Hall and Photo-Hall measurements proved that peaks observed in Photo-DLTS spectra are due to the electron emission from deep donor states. Other peaks obtained in PICTS spectra were attributed to the hole emission from acceptor states with the apparent energy levels E/sub pa/ /spl ap/ 0.18, 0.19, 0.21, 0.5 eV. A minimal value of their total concentration except of 0.5 eV level was estimated at about 1x10/sup 15/ cm/sup -3/. The peak of 0.5 eV level with dominant amplitude in detected spectra correlates with the hole emission from EL2/sup +/++/ double donor state. The 0.19 and 0.21 levels are most probably related to the double acceptor Ga/sub As/ antisite.defect.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752707\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of deep acceptor states in undoped Semi-insulating GaAs with low carbon content by transient spectroscopy techniques
Deep states in undoped semi-insulating GaAs with low carbon content were investigated by PICTS and Photo-DLTS. Hall and Photo-Hall measurements proved that peaks observed in Photo-DLTS spectra are due to the electron emission from deep donor states. Other peaks obtained in PICTS spectra were attributed to the hole emission from acceptor states with the apparent energy levels E/sub pa/ /spl ap/ 0.18, 0.19, 0.21, 0.5 eV. A minimal value of their total concentration except of 0.5 eV level was estimated at about 1x10/sup 15/ cm/sup -3/. The peak of 0.5 eV level with dominant amplitude in detected spectra correlates with the hole emission from EL2/sup +/++/ double donor state. The 0.19 and 0.21 levels are most probably related to the double acceptor Ga/sub As/ antisite.defect.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
