分子束外延过程中异质结构辐射加热机理分析

2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE) Pub Date : 2014-10-01 DOI:10.1109/APEIE.2014.7040838

A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova

{"title":"分子束外延过程中异质结构辐射加热机理分析","authors":"A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova","doi":"10.1109/APEIE.2014.7040838","DOIUrl":null,"url":null,"abstract":"The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.","PeriodicalId":202524,"journal":{"name":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy\",\"authors\":\"A. Velichko, V. Ilyushin, A. Katsyuba, G. F. Sivyh, N. I. Filimonova\",\"doi\":\"10.1109/APEIE.2014.7040838\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.\",\"PeriodicalId\":202524,\"journal\":{\"name\":\"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2014.7040838\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2014.7040838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文考虑了分子束外延过程中异质结构辐射加热的物理模型。结果表明，带隙小于衬底的异质外延半导体的温度随薄膜厚度的增加而升高。提出了Ge/Si异质结构温度随薄膜厚度变化的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of the radiation heating mechanisms of heterostructures during molecular beam epitaxy

The paper considers the physical model of radiation heating of the heterostructures during molecular beam epitaxy. It is shown that the temperature of the heteroepitaxial semiconductor with a band gap smaller than that of the substrate increases with increasing of the film thickness. Mechanisms of the temperature change of the Ge/Si heterostructure depending on the film thickness Ge are proposed.

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2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)

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