约瑟夫森结用Nb膜和Nb/Al-AlOx/Nb三层膜的生长和表征

X. Kang, Liliang Ying, Guofeng Zhang, Huiwu Wang, X. Kong, W. Peng, Xiaoming Xie
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引用次数: 1

摘要

利用磁控溅射技术,研究了衬底对Si(100)、SiO2/Si(100)、MgO(100)和c面蓝宝石(Al2O3)表面沉积Nb薄膜结构和微观结构的影响。原子力显微镜显示,这些衬底上主要是细长的柱状颗粒。x射线衍射图显示在Si、SiO2/Si和蓝宝石基底上有(110)取向生长,而在MgO基底上有织构生长。通过x射线反射和透射电镜分析,证实Nb膜表面存在约2nm的非晶态氧化层。随后,在Si衬底上制备了Nb/Al-AlOx/Nb三层膜,并对其界面微观结构进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth and characterization of Nb films and Nb/Al-AlOx/Nb trilayers for Josephson junctions
We study the influences of substrates on structure and microstructure characteristics of Nb films deposited onto Si (100), SiO2/Si (100), MgO (100) and C-plane sapphire (Al2O3) by use of magnetron sputtering. Atomic force microscopy shows that elongated columnar shaped grains dominate on these substrates. X-ray diffraction patterns indicate (110)-oriented growth on Si, SiO2/Si and sapphire substrates, while textured growth occurs on MgO substrate. An amorphous oxide layer about 2 nm on the surface of Nb films is confirmed by X-ray reflectometry and transmission electron microscopy analysis. Subsequently, Nb/Al-AlOx/Nb trilayers on Si substrates are fabricated and the interfacial microstructures are also investigated.
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