{"title":"约瑟夫森结用Nb膜和Nb/Al-AlOx/Nb三层膜的生长和表征","authors":"X. Kang, Liliang Ying, Guofeng Zhang, Huiwu Wang, X. Kong, W. Peng, Xiaoming Xie","doi":"10.1109/ISEC.2013.6604315","DOIUrl":null,"url":null,"abstract":"We study the influences of substrates on structure and microstructure characteristics of Nb films deposited onto Si (100), SiO2/Si (100), MgO (100) and C-plane sapphire (Al2O3) by use of magnetron sputtering. Atomic force microscopy shows that elongated columnar shaped grains dominate on these substrates. X-ray diffraction patterns indicate (110)-oriented growth on Si, SiO2/Si and sapphire substrates, while textured growth occurs on MgO substrate. An amorphous oxide layer about 2 nm on the surface of Nb films is confirmed by X-ray reflectometry and transmission electron microscopy analysis. Subsequently, Nb/Al-AlOx/Nb trilayers on Si substrates are fabricated and the interfacial microstructures are also investigated.","PeriodicalId":233581,"journal":{"name":"2013 IEEE 14th International Superconductive Electronics Conference (ISEC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth and characterization of Nb films and Nb/Al-AlOx/Nb trilayers for Josephson junctions\",\"authors\":\"X. Kang, Liliang Ying, Guofeng Zhang, Huiwu Wang, X. Kong, W. Peng, Xiaoming Xie\",\"doi\":\"10.1109/ISEC.2013.6604315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the influences of substrates on structure and microstructure characteristics of Nb films deposited onto Si (100), SiO2/Si (100), MgO (100) and C-plane sapphire (Al2O3) by use of magnetron sputtering. Atomic force microscopy shows that elongated columnar shaped grains dominate on these substrates. X-ray diffraction patterns indicate (110)-oriented growth on Si, SiO2/Si and sapphire substrates, while textured growth occurs on MgO substrate. An amorphous oxide layer about 2 nm on the surface of Nb films is confirmed by X-ray reflectometry and transmission electron microscopy analysis. Subsequently, Nb/Al-AlOx/Nb trilayers on Si substrates are fabricated and the interfacial microstructures are also investigated.\",\"PeriodicalId\":233581,\"journal\":{\"name\":\"2013 IEEE 14th International Superconductive Electronics Conference (ISEC)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 14th International Superconductive Electronics Conference (ISEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEC.2013.6604315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 14th International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC.2013.6604315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth and characterization of Nb films and Nb/Al-AlOx/Nb trilayers for Josephson junctions
We study the influences of substrates on structure and microstructure characteristics of Nb films deposited onto Si (100), SiO2/Si (100), MgO (100) and C-plane sapphire (Al2O3) by use of magnetron sputtering. Atomic force microscopy shows that elongated columnar shaped grains dominate on these substrates. X-ray diffraction patterns indicate (110)-oriented growth on Si, SiO2/Si and sapphire substrates, while textured growth occurs on MgO substrate. An amorphous oxide layer about 2 nm on the surface of Nb films is confirmed by X-ray reflectometry and transmission electron microscopy analysis. Subsequently, Nb/Al-AlOx/Nb trilayers on Si substrates are fabricated and the interfacial microstructures are also investigated.