40nm NAND闪存可靠性失效分析与识别工具组合

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898130

M. Hsiao, Yi Heng Chen, L. Yang

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引用次数: 1

摘要

在传统的失效分析程序中，很难找到40nm NAND闪存可靠性测试失效的物理根源。由于其微漏性较弱，金属导线重复且长度较长。我们使用OBIRCH(光学光束感应电阻变化)和PVC(无源电压对比)等几种分析方法来缩小缺陷位置，将缺陷位置缩小到100um。此外，电子束吸收电流(EBAC)结合FIB电路修复将故障位置隔离到一个通孔。最后，我们成功地进行了FIB截面分析，找到了根本原因。

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40nm NAND flash reliability failure analysis with identification tools combination

In the tradition failure analysis procedure, it is hard to find the physical root cause for 40nm NAND flash reliability testing failure. Because of it has weak micro-leak with repeating and longer metal conducting wire. We used several analysis methods to narrow down the defect location such as OBIRCH (Optical Beam Induced Resistance change) and PVC (Passive Voltage Contrast) to narrow down to 100um. Besides, EBAC (Electron Beam Absorbed Current) combine FIB circuit repair to isolation the failure location to one via. Finally, we preformed the FIB cross section analysis success to find the root cause.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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