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一个64K双极PROM

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1982.1156406
R. Fisher
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引用次数: 3

摘要

将讨论一种65,536b双极PROM，在结隔离工艺和3μ光刻上使用横向NiCr熔断器连接。功耗为190mA，典型接入时间为45ns。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A 64K bipolar PROM
A 65,536b bipolar PROM, using a lateral NiCr fuse link on a junction isolated process and 3μ lithography, will be discussed. Consumption is 190mA and typical access time is 45ns.
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1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
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