基于改进型压差跨导放大器的新型全波整流器

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Predrag B. Petrović
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引用次数: 3

摘要

本文提出了一种基于改进的跨导差分放大器mvdta和四个n-MOS晶体管(或反相全波整流器)的全波整流器,不使用任何无源元件。本设计适用于低压高频输入电压/电流信号。使用后的MVDTA在不改变原有VDTA电路资源的情况下,增加了一些新的连接。所提出的结构具有令人满意的过零性能,良好的线性度,低元件数,结构简单紧凑,使其成为以IC电路形式实现的合适人选。该电路输出端的电流/电压整流信号的幅值波形可以通过施加的偏置电流进行电子控制。分析了可能的非理想效应和寄生效应的影响,而由于没有任何被动元件,寄生效应仅是边际效应。为了验证电路的有效性,采用0.18 μm CMOS工艺参数和±0.9 V电源电压进行SPICE仿真,结果与理论预测完全一致。还进行了噪声和蒙特卡罗分析,以便进一步了解所提出设计的鲁棒性。实验结果验证了该方案的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

New full-wave rectifier based on modified voltage differencing transconductance amplifier

New full-wave rectifier based on modified voltage differencing transconductance amplifier

A full-wave rectifier based on a modified voltage differencing transconductance amplifier-MVDTA and four n-MOS transistors (or inverting full-wave rectifier), with no use of any passive elements is proposed in this paper. The proposed design is suitable for a low voltage and high frequency input voltage/current signal. The used MVDTA possesses certain new connections without any changes in the original circuit resources of VDTA. The proposed configuration possesses satisfactory zero crossing performance, excellent linearity, low component count―a simple and compact structure―which makes it an adequate candidate for implementation in the form of IC circuits. The amplitude-waveform of the current/voltage rectified signal at the output of the proposed circuit can be electronically controlled by the applied bias currents. The influence of possible non-ideality and parasitic effects was analysed, while the effects of the parasitic are only marginal due to the absence of any passive elements. To verify the validity of the presented circuits, SPICE simulations deploying 0.18 μm CMOS technology parameters and supply voltage of ±0.9 V are reported, fully consistent with the theoretical predictions. The noise and Monte Carlo analyses were also performed in order to obtain further insight into the robustness of the proposed design. The proposal is also supported by experimental results in order to confirm the workability of the proposed solution.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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