利用体偏置技术实现了温度不敏感锁定的LSI系统

G. Ono, M. Miyazaki, Kazuki Watanabe, T. Kawahara
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引用次数: 10

摘要

正向体偏置(FBB)技术可以补偿lsi在低压工作时的性能波动。然而,由于FBB的特性依赖于温度,在高温下FBB的控制效果下降。电源电压的温度不敏感状态(TIS)改善了LSI的性能,解决了FBB特性对温度的依赖。当LSI在TIS中工作时,性能波动在低温条件下是固定的。我们提出了一种TIS锁定电路,实现了TIS操作,降低了性能波动。该电路通过检测阈值电压并产生与温度成比例的电压来实现这一点。补偿TIS将LSI的性能波动和功耗降低到应用TIS控制之前的三分之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An LSI system with locked in temperature insensitive state achieved by using body bias technique
Forward-body-bias (FBB) technology can compensate performance fluctuation in LSIs for low-voltage-operation. However, because the FBB characteristics depend on the temperature, the FBB control effect is decreased at high temperatures. A temperature insensitive state (TIS) for supply voltage improves the LSI performance as a solution of the dependence of the FBB characteristics on temperature. When an LSI is operated in a TIS, the performance fluctuation is fixed in a low temperature condition. We propose a TIS locking circuit that achieves TIS operation and reduces performance fluctuation. The circuit achieves this by detecting the threshold voltage and generating a voltage proportional to temperature. Compensating TIS decreased performance fluctuation and power consumption of an LSI to one-third of those before TIS control was applied.
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