{"title":"复杂变量的可调逻辑及其基础上的量子网络","authors":"N. Plyusnin","doi":"10.31776/rtcj.10404","DOIUrl":null,"url":null,"abstract":"Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.","PeriodicalId":376940,"journal":{"name":"Robotics and Technical Cybernetics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunable logic of complex variables and quantum networks on its basis\",\"authors\":\"N. Plyusnin\",\"doi\":\"10.31776/rtcj.10404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.\",\"PeriodicalId\":376940,\"journal\":{\"name\":\"Robotics and Technical Cybernetics\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Robotics and Technical Cybernetics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31776/rtcj.10404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Robotics and Technical Cybernetics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31776/rtcj.10404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunable logic of complex variables and quantum networks on its basis
Continuous - additive-multiplicative (AM) logic is considered, in which logical operations are replaced by algebraic operations («×» and «+») or operations with vectors, and binary variables «0» and «1» are replaced by continuous scalar ones («0- 1») or complex variables. To build this logic, a continuous analogue of the canonical form of Boolean logic is used in the form of a perfect disjunctive or conjunctive normal form (KAM logic). A feature of KAM logic is a continuous dependence on input variables and a potential variety of continuous logic functions. Based on the previously proposed «fuzzy» (distributed) continuous function, in the form of a superposition of «clear» functions, and the tunable QAM element circuit that implements it, this element is generalized to a network QAM element with several tunable outputs. The multiplication functions in this QAM element can be performed using a known memristor, which can be replaced by a memtransistor based on a field effect transistor. In quantum QAM networks, these elements are, respectively: «k-memristor» and «k-memtransistor». One of the options for a k-memtransistor is a composite hybrid spin-field-effect transistor based on a planar spin valve with magnetic memory and a field-effect transistor with a ferroelectric memory. It is noted that the main technological problem of quantum QAM networks based on such a hybrid spin transistor is the creation of planar conducting and ferromagnetic elements based on ultrathin metallic and ferromagnetic films on silicon.