Optical Properties of Silicon Nanowhiskers Obtained by Metal-Assisted Chemical Etching under Gamma Irradiation

The results of a study of the optical properties of porous silicon nanostructures obtained by metal-assisted chemical etching of γ-quanta irradiated with low doses during their formation are discussed. The total reflection from the obtained samples depends not only on the irradiation dose of the forming layer, but also on the dose of preliminary irradiation of the initial silicon wafer by in situ control. By studying the Raman spectra of the samples, it was confirmed that changes in the spectra take place both due to the effect of small doses of γ-quanta on the initial silicon wafers and due to the in situ effect of gamma radiation on the forming SiNWs. We observed a shift in the wavelength of the photoluminescence maximum from 600 nm to 750 nm with a change in the irradiation of the initial silicon wafer from 0 to 40 kR at the same dose of irradiation of the forming porous layer.