高温注入1.2kV SiC二极管的浪涌性能

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393692

Hongyi Xu, Jiahui Sun, J. Cui, Jiupeng Wu, Hengyu Wang, Shu Yang, Na Ren, Kuang Sheng

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引用次数: 6

摘要

本文提出了一种高温注入4H-SiC JBS二极管，提高了浪涌性能。在500°C的注入下实现了P+区域的制备。结果表明，Ti无需额外退火即可在高温注入P+区形成欧姆接触。这可以简化MPS制造的欧姆接触过程。在本工作中，设计了一个在小区和终端之间的宽过渡P+区域，可以缓解snapback现象，提高浪涌能力。

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Surge capability of 1.2kV SiC diodes with high-temperature implantation

This paper presents a high-temperature implanted 4H-SiC JBS diode with improved surge capability. The fabrication of the P+ region is implemented with 500 °C implantation. It was found that Ti can form ohmic contact on high temperature implanted P+ region without any additional annealing. This could simplify the ohmic contact process for MPS fabrication. In this work, a wide transition P+ region between cell and termination is designed, which can alleviate snapback phenomenon and improve the surge capability.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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