{"title":"一种闪光辅助动态范围分段逐次逼近寄存器(SAR)模数转换器","authors":"Sounak Roy, Raju Naik, Archana Kumari, D. Mahesh","doi":"10.1109/CIRSYSSIM.2017.8023178","DOIUrl":null,"url":null,"abstract":"A new SAR ADC design is presented in this paper, which applies a flash ADC for the segmentation of its dynamic range. An n bit flash component of the proposed ADC divides the dynamic range into 2n segments. Each of these segments are further resolved by finer SAR ADCs. Application of the n-bit flash ADC reduces n execution cycles of the SAR ADC, thus enhancing the sampling rate. Hardware addition costs nominal power overhead, which helps to improve the figure-of-merit (FoM) significantly. Two SAR ADCs using the proposed technique are designed and simulated in a 180 nm CMOS process. 6-bit and 7-bit ADCs with the proposed design produce signal-to-noise-and-distortion ratio (SNDR) of 32.42 dB and 38.07 dB respectively. FoM of 6-bit and 7-bit proposed ADCs are 0.54 and 0.38 fraction of their conventional counterparts respectively.","PeriodicalId":342041,"journal":{"name":"2017 International Conference on Circuits, System and Simulation (ICCSS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A flash assisted dynamic range segmented successive approximation register (SAR) analog to digital converter\",\"authors\":\"Sounak Roy, Raju Naik, Archana Kumari, D. Mahesh\",\"doi\":\"10.1109/CIRSYSSIM.2017.8023178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new SAR ADC design is presented in this paper, which applies a flash ADC for the segmentation of its dynamic range. An n bit flash component of the proposed ADC divides the dynamic range into 2n segments. Each of these segments are further resolved by finer SAR ADCs. Application of the n-bit flash ADC reduces n execution cycles of the SAR ADC, thus enhancing the sampling rate. Hardware addition costs nominal power overhead, which helps to improve the figure-of-merit (FoM) significantly. Two SAR ADCs using the proposed technique are designed and simulated in a 180 nm CMOS process. 6-bit and 7-bit ADCs with the proposed design produce signal-to-noise-and-distortion ratio (SNDR) of 32.42 dB and 38.07 dB respectively. FoM of 6-bit and 7-bit proposed ADCs are 0.54 and 0.38 fraction of their conventional counterparts respectively.\",\"PeriodicalId\":342041,\"journal\":{\"name\":\"2017 International Conference on Circuits, System and Simulation (ICCSS)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Circuits, System and Simulation (ICCSS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIRSYSSIM.2017.8023178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Circuits, System and Simulation (ICCSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIRSYSSIM.2017.8023178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A flash assisted dynamic range segmented successive approximation register (SAR) analog to digital converter
A new SAR ADC design is presented in this paper, which applies a flash ADC for the segmentation of its dynamic range. An n bit flash component of the proposed ADC divides the dynamic range into 2n segments. Each of these segments are further resolved by finer SAR ADCs. Application of the n-bit flash ADC reduces n execution cycles of the SAR ADC, thus enhancing the sampling rate. Hardware addition costs nominal power overhead, which helps to improve the figure-of-merit (FoM) significantly. Two SAR ADCs using the proposed technique are designed and simulated in a 180 nm CMOS process. 6-bit and 7-bit ADCs with the proposed design produce signal-to-noise-and-distortion ratio (SNDR) of 32.42 dB and 38.07 dB respectively. FoM of 6-bit and 7-bit proposed ADCs are 0.54 and 0.38 fraction of their conventional counterparts respectively.