一种实用的SRAM存储器3 - 12n测试与诊断算法

W. Z. Wan Hasan, M. Othman, B. Suparjo
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引用次数: 7

摘要

测试和诊断技术在半导体存储技术的发展中起着至关重要的作用。故障检测的挑战促使人们对有效的测试和诊断算法进行深入研究,以提高故障覆盖率和成品率。面向位诊断算法的测试和诊断复杂度为12N, N为故障检测和诊断的地址个数。采用该算法(march-12N),故障模型下100%的故障被覆盖并部分区分。他们还可以定位有缺陷的细胞并识别它们的类型。给出了状态耦合故障、幂等耦合故障和反演耦合故障的完整故障诊断程序。因此,对SRAM存储器中出现的所有耦合故障进行了验证,证明了结果的有效性。此外,实际的12N测试和诊断算法显示出诊断分辨率和测试时间的提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Realistic March-12N Test And Diagnosis Algorithm For SRAM Memories
Testing and diagnosis techniques play a key role during the advance of semiconductor memory technologies. The challenge of failure detection has created intensive investigation on efficient testing and diagnosis algorithm for better fault coverage and yield improvement. The test and diagnosis complexity are 12N for bit-oriented diagnosis algorithm, N is the number of addresses is proposed for fault detection and diagnosis. Using the proposed march-based algorithm (march-12N), 100% of the faults under the fault model are covered and partial distinguished. They also can locate the faulty cells and identify their types. The complete fault and diagnosis procedures for state coupling faults, idempotent coupling faults and inversion coupling faults are written in this paper. Therefore, all the coupling faults that occur in SRAM memories are verified and proved the valid results. Furthermore, the realistic 12N test and diagnosis algorithm has shown the improvement of diagnostic resolution and test time.
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