用于逻辑和存储器的三维纳米电子电池的操作

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982162

C. Hu, J. Jiang, Q. Cai

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引用次数: 0

摘要

本文通过研究带间隧道二极管(RITD) (InAs/AsSb/GaSb)的负差分电导(NDC)和金属纳米点之间的相互作用，提出并论证了一种新的双稳和四稳运行的理论模型，该模型基于金属纳米点在RITD表面形成紧凑的二维阵列的三维纳米电子电池。我们提出了一个简化的电路模型，没有考虑金属纳米点之间的单电子效应，其中RITD由一个简化的基于物理的模型来描述。我们研究了三维纳米电子电池的数值结果及其对相关参数的依赖关系。最后，考虑金属纳米点之间单电子效应的蒙特卡罗模拟计算表明，我们的简化模型足以全面地描述该系统的本质。计算结果表明，该方法在未来的纳米逻辑和纳米存储领域具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Operation of a 3D nano-electron cell for logic and memory

In this paper, by exploring the negative differential conductance (NDC) of a resonant interband tunneling diode (RITD), e.g. InAs/AsSb/GaSb, and the interaction between metallic nano-dots, we present and demonstrate a theoretical model of a novel bi-stable and 4-stable operation on the basis of the three-dimensional (3D) nano-electron cell which consists of metallic nano-dots forming into compact and two-dimension (2D) arrays on the surface of RITDs. We present a simplified circuit model without considering single-electron effects between metallic nano-dots, where the RITD is described by a simplified physics-based model. We investigate numerical results for this 3D nano-electron cell and their dependence on the relevant parameters. At last calculations based on Monte Carlo simulation considering single-electron effects between metallic nano-dots demonstrate that our simplified model is comprehensive enough to describe this system in nature. The calculated results demonstrate it is promising for future nano-logic and nano-memory applications.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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