在1.8 V, 0.25 /spl mu/m CMOS体和SOI技术中实现高速多端口寄存器文件

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1900-01-01 DOI:10.1109/VTSA.1999.786053

R. Joshi, W. Hwang, S. Wilson, G. Shahidi, C. Chuang

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引用次数: 1

摘要

介绍了在1.8 V、0.25 /spl mu/m CMOS体和SOI硅技术下实现高速8端口、32字/spl次/64位寄存器文件的硬件实验结果。这样的寄存器文件是为批量技术设计的，但也可以在没有任何身体接触的情况下在SOI技术中重新映射和制造。结果表明，SOI中的寄存器文件比对应的寄存器文件获得20%以上的性能增益。

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Implementation of a high speed multiport register file in a 1.8 V, 0.25 /spl mu/m CMOS bulk and SOI technology

The experimental hardware results of a high speed 8-port, 32 word/spl times/64-bit register file in 1.8 V, 0.25 /spl mu/m CMOS bulk and SOI silicon technology are presented. Such a register file is designed for bulk technology but is also remapped and fabricated in SOI technology without any body contacts. It is shown that the register file in SOI achieves more than 20% performance gain over the counterpart.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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