神经形态学习回路中对缺陷忆阻器的耐受性

C. Yakopcic, Raqibul Hasan, T. Taha
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引用次数: 14

摘要

本文描述了一种基于记忆电阻器的具有学习能力的神经形态电路。将横条电路中的目标忆阻器设置为高阻或低阻状态,以观察忆阻器横条内的容错性。在SPICE中使用详细的忆阻器模型进行仿真,以便尽可能准确地模拟横杆。在某些情况下,电路能够成功地学习,当一半的记忆电阻器在横条被设置为有缺陷。由于额外的偏置电路,这种神经形态记忆学习电路似乎比其他设计更能容忍错误。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tolerance to defective memristors in a neuromorphic learning circuit
This paper describes a memristor based neuromorphic circuit that is capable of learning. Target memristors within the crossbar circuit were set to be stuck in either high or low resistance states to observe fault tolerance within the memristor crossbar. The simulations are carried out in SPICE using a detailed memristor model so that the crossbar is simulated as accurately as possible. In some cases the circuit was able to successfully learn when half of the memristors in the crossbar were set to be defective. Due to additional bias circuitry, this neuromorphic memristive learning circuit appears to be more tolerant to error than alternative designs.
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