低成本单片微波集成电路的Si/SiGe HBT技术

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488522

L. Larson, M. Case, S. Rosenbaum, D. Rensch, P. Macdonald, M. Matloubian, M. Chen, D. Harame, J. Malinowski, B. Meyerson, M. Gilbert, S. Maas

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引用次数: 44

摘要

这种硅基微波集成电路技术适用于实现5-25 GHz的高性能低成本有源电路。该技术有望通过利用可制造的高产量硅IC工艺，大幅降低微波集成电路技术的成本，同时实现更高集成度的微波收发器组件。用该技术实现的各种微波集成电路包括混频器、分频器、放大器和压控振荡器，证明了硅集成电路技术在高微波频谱中实现低成本集成电路的可行性。

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Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits

This silicon-based microwave integrated-circuit technology is suitable for implementation of high-performance low-cost active circuits from 5-25 GHz. This technology promises to dramatically reduce the cost of microwave integrated circuit technology by utilizing manufacturable, high-yield, silicon IC processing, and at the same time enable more highly integrated implementations of microwave transceiver components. A variety of microwave integrated circuits implemented in this technology include mixers, frequency dividers, amplifiers and VCOs, demonstrating feasibility of silicon integrated circuit technology for implementation of low-cost integrated circuits in the upper microwave spectrum.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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