用于传感器阵列的列并行SAR/SS两步混合ADC设计

Zheng Wang, Xu Liu, Peiyuan Wan, Zhijie Chen
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引用次数: 1

摘要

提出了一种用于传感器阵列的逐次逼近寄存器/单斜率(SAR/SS)两步混合模数转换器(ADC)电路。提出了一种折衷面积和速度性能的10位列并行SAR/SS ADC架构。6位SAR ADC在第一步进行粗量化,SS ADC在第二步进一步进行4位精细量化,完成最后的数据转换。ADC电路采用台积电0.18 μm CMOS工艺设计,电源电压为1.8 V。时钟频率为25mhz时,采样率可达1msps,单通道功耗仅为127.26 μW。ADC的微分非线性(DNL)和积分非线性(INL)分别为-0.375 LSB/+0.375 LSB和-0.375 LSB/+1.5 LSB。有效比特数(ENOB)和信噪比(SNR)分别为9.44 bit和60.49 dB。实现了183.22 fJ/conv的优值(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a column-parallel SAR/SS two-step hybrid ADC for sensor arrays
This paper presents a Successive Approximation Register/Single Slope (SAR/SS) two-step hybrid Analog-to-Digital Converter (ADC) circuit for sensor arrays. A 10-bit column-parallel SAR/SS ADC architecture with the area and speed performances compromise is proposed. A 6-bit SAR ADC performs the coarse quantization in the first step, and a SS ADC further performs the 4-bit fine quantization in the second step to complete the final data conversion. The ADC circuit is designed in TSMC 0.18 μm CMOS process with the 1.8 V power supply voltage. A sampling rate of 1 Msps is achieved at the clock frequency of 25 MHz, and the power consumption per channel is only 127.26 μW. The Differential Nonlinearity (DNL) and Integral Nonlinearity (INL) of the ADC are -0.375 LSB/+0.375 LSB and - 0.375 LSB/+1.5 LSB, respectively. The Effective Number of Bits (ENOB) and Signal-to-Noise Ratio (SNR) are 9.44 bit and 60.49 dB, respectively. A Figure of Merit (FOM) of 183.22 fJ/conv is achieved.
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