采用新型隔离自屏蔽结构实现稳健的600V高边极驱动集成电路

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487971

S.L. Kim, C. Jeon, M. Kim, J.J. Kim

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引用次数: 28

摘要

实验实现了一种采用新型自屏蔽概念、具有良好隔离结构的鲁棒高边门驱动集成电路。完全耗尽的p隔离区和低掺杂杂质消除了泄漏电流引起的串扰问题，这是600V额定HVIC使用自屏蔽结构时两个LDMOS用作移电平器的本质问题。此外，高侧岛区的高掺杂n+埋层具有良好的抗dV/dt能力。采用该结构的HVIC显示出65 kV/us的dV/dt特性和良好的高侧IGBT驱动特性。

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Realization of robust 600V high side gate drive IC with a new isolated self-shielding structure

A robust high side gate driver IC adapting new self-shielding concept with perfect isolation structure is experimentally realized. The fully depleted p-isolation region with low doping impurity gets rid of the crosstalk problem caused by leakage currents, which is essential problem of 600V, rated HVIC using self-shielding structure, between two LDMOS used as level shifters. In addition, highly doped n+ buried layer in the high side island region of proposed structure has led good dV/dt immunity. An HVIC adapting proposed structure has shown 65 kV/us of dV/dt characteristics and good characteristics for high side IGBT driving.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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