MS-EMC与NEGF:考虑输运量子修正的比较研究

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-05-07 DOI:10.1109/ULIS.2018.8354758

C. Medina-Bailón, C. Sampedro, J. Padilla, A. Godoy, L. Donetti, F. Gámiz, A. Asenov

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引用次数: 10

摘要

随着电子器件接近纳米尺度，量子输运理论已被认为是再现其性能的最佳选择。另一个可能的趋势，主要集中在减少计算工作量，是在半经典模拟器中包含量子效应。这项工作提出了NEGF模拟器和MS-EMC工具之间的比较，包括S/D隧道都应用在DGSOI晶体管上。

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MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections

As electronic devices approach the nanometer scale, quantum transport theories have been recognized as the best option to reproduce their performance. Other possible trend, mainly focused on reducing the computational effort, is the inclusion of quantum effects in semi-classical simulators. This work presents a comparison between a NEGF simulator and a MS-EMC tool including S/D tunneling both applied on a DGSOI transistor.

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2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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