基于氮化镓的弹道电子加速度负微分电导率二极管的潜在太赫兹应用

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553052

H. Cha, Xiaodong Chen, W. Schaff, M. Spencer, L. Eastman, B. Ridley, J. Pomeroy, M. Kuball

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引用次数: 1

摘要

为了实现在太赫兹频率下的工作，电子设备需要达到尽可能高的传输速度，即使这个速度被限制在很短的距离内。化合物半导体中弹道电子的概念最初是用砷化镓(Shur and Eastman, 1979)报道的。在这项工作中，报告了GaN基弹道电子加速负微分电导率(BEAN)二极管的初步研究进展及其器件概念

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Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications

In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity (BEAN) diodes for potential THz oscillator is reported along with their device concepts

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63rd Device Research Conference Digest, 2005. DRC '05.

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