一种新的二维奇偶校验结构,用于设计抗辐射SRAM

Quan-Lin Rao, Chun He
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引用次数: 4

摘要

针对设计抗辐射(RHBD) sram对辐射引起的单事件扰动(SEU)不敏感的问题,提出了一种新的二维奇偶校验结构。讨论了高密度RHBD ram中常用的二维奇偶校验方法及其局限性。这种新结构可以用来纠正多达四个相邻的打乱错误,更适合保护高密度存储器免受SEU的影响。这种新颖的二维奇偶校验结构已成功地应用于嵌入式SOC芯片的RHBD sram中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new 2-D parity checking architecture for radiation-hardened by design SRAM
A novel tow-dimension (2-D) parity checking architecture is proposed for Radiation-Hardened by Design (RHBD) SRAMs, which are insensitive to radiation-induced single-event upsets (SEU). The common 2-D parity checking method and its limitations in high density RHBD SRAMs are discussed. The novel architecture, which could be used to correct up to four adjacent upset errors, is more suitable for protecting high density memories from SEU. This novel 2-D parity checking architecture has been successfully used in RHBD SRAMs embedded in a SOC chip.
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