{"title":"一种高效的0.2 THz无变容压控振荡器,输出功率为-7 dBm,尺寸为130nm","authors":"Pei-Yuan Chiang, O. Momeni, P. Heydari","doi":"10.1109/CSICS.2012.6340100","DOIUrl":null,"url":null,"abstract":"A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe\",\"authors\":\"Pei-Yuan Chiang, O. Momeni, P. Heydari\",\"doi\":\"10.1109/CSICS.2012.6340100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.\",\"PeriodicalId\":290079,\"journal\":{\"name\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2012.6340100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe
A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of -7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.