{"title":"新型CMP技术控制氮的去除率","authors":"T. Shinoda, A. Endou, K. Sugai","doi":"10.1109/issm.2018.8651168","DOIUrl":null,"url":null,"abstract":"A novel model was proposed to control the removal rate (RR) for SiN with chemical additives having (1) the functions to approach to the SiN substrate and to adsorb on it and (2) the functions to react with the SiN substrate and to change the strength of Si – N bonds. By using the computational chemistry methods, these functions were justified, and the ratios of the model RR for SiN were also calculated. These ratios were in agreement with those of the experimental RR for SiN, which demonstrated the validity of our novel model.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel CMP technology for removal rate control of SiN\",\"authors\":\"T. Shinoda, A. Endou, K. Sugai\",\"doi\":\"10.1109/issm.2018.8651168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel model was proposed to control the removal rate (RR) for SiN with chemical additives having (1) the functions to approach to the SiN substrate and to adsorb on it and (2) the functions to react with the SiN substrate and to change the strength of Si – N bonds. By using the computational chemistry methods, these functions were justified, and the ratios of the model RR for SiN were also calculated. These ratios were in agreement with those of the experimental RR for SiN, which demonstrated the validity of our novel model.\",\"PeriodicalId\":262428,\"journal\":{\"name\":\"2018 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/issm.2018.8651168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/issm.2018.8651168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel CMP technology for removal rate control of SiN
A novel model was proposed to control the removal rate (RR) for SiN with chemical additives having (1) the functions to approach to the SiN substrate and to adsorb on it and (2) the functions to react with the SiN substrate and to change the strength of Si – N bonds. By using the computational chemistry methods, these functions were justified, and the ratios of the model RR for SiN were also calculated. These ratios were in agreement with those of the experimental RR for SiN, which demonstrated the validity of our novel model.
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