R. Koerner, M. Oehme, M. Gollhofer, K. Kostecki, M. Schmid, S. Bechler, D. Widmann, E. Kasper, J. Schulze
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Optical bleaching in electrical pumped n-doped Ge on Si optical devices
In this presentation we discussed the growth and the optical properties of n-doped Ge lateral LEDs. We showed, that the optical bleaching of the material and the corresponding decrease of net absorption in the Fabry-Perot cavity leads to higher electroluminescence intensity. This is a very important step to achieve net-gain inside the indirect semiconductor material Ge and to build a laser device5 with low threshold current densities.
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