氮化镓晶体管的5相交错降压变换器

N. Videau, T. Meynard, V. Bley, D. Flumian, E. Sarraute, G. Fontès, J. Brandelero
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引用次数: 15

摘要

最近推出的氮化镓(GaN)功率器件可以实现更紧凑的功率变换器。然而,电源板布局变得更加关键。为了减少开关损耗和电压超调,实现快速、安全的驱动,杂散电感必须最小化。本文介绍了一种采用GaN EPC 100V器件集成在多层PCB板上的5相DC-DC交错降压变换器和InterCell变压器(ICT)。看来,功率去耦电容器的布线是杂散电感和5相单个散热片冷却之间权衡的结果。电源板(110mm×62mm, 51g)在1.8kW下48V到24V转换,有效输出电流频率为1.5MHz,效率达到97%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
5-phase interleaved buck converter with gallium nitride transistors
More compact power converters can be realized with the recently introduced gallium nitride (GaN) power devices. However, power board layout becomes more critical. In order to reduce switching losses, voltage overshoot and to achieve fast and safe drive, the stray inductances should be minimized. In this paper, a 5-phase DC-DC interleaved buck converter with an InterCell Transformer (ICT) integrated in a multilayer PCB using GaN EPC 100V devices is described. It appears that the routing of power decoupling capacitors is the result of a tradeoff between stray inductance and cooling with a single heatsink for the 5 phases. The power board (110mm×62mm, 51g) reaches 97% efficiency with a 48V to 24V conversion at 1.8kW and an effective output current frequency of 1.5MHz.
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