基于ONOFIC和LECTOR的泄漏功率降低方法的性能比较

Sagar B. Yadav, Kunwar Singh
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引用次数: 1

摘要

技术的进步导致了更复杂的电子设备的产生,这导致了电池寿命的最小化。因此,电子设备的节电是现代场景中主要关注的问题。随着数字电路体积的不断减小,漏电流的不断增大成为设计低功耗电路的一大难题。本文讨论了降低数字CMOS电路泄漏功率的不同方法。为了减少泄漏功率,各种数字电路如缓冲器、多路复用器和触发器中都使用了LECTOR和ONOFIC技术。基于逻辑努力理论(LE理论)的优化晶体管尺寸的数字电路实现了高性能。对上述电路的泄漏功率、延迟和泄漏功率延迟积(PDP)进行了比较研究。在LtSpice中使用65nm PTM技术在0.9V电源下进行电路仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance comparison of ONOFIC and LECTOR based approaches for Leakage Power Reduction
Advancement in technology leads to the creation of more complex electronic devices which results in the minimization of battery life. Therefore, the saving power of electronic devices is the major concern in modern-day scenarios. As the size of digital circuits goes on decreasing, the problem of increasing leakage current is preventing us to design low power circuits. In this paper, different approaches for leakage power reduction in digital CMOS circuits are discussed. To reduce leakage power, LECTOR and ONOFIC techniques are used in various digital circuits like buffer, multiplexer, and flip-flop. Digital circuits have been implemented for high performance with optimized transistor sizing which is done based on Logical Effort Theory (LE theory). A comparative study of leakage power, delay, and leakage power-delay product (PDP) for the above-mentioned circuits is performed. The simulations of circuits are performed in LtSpice using 65nm PTM technology at a power supply of 0.9V.
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