提高N沟道和p沟道有机场效应管性能的源/沟道/漏极能级考虑

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553078

T. Yokoyama, T. Nishimura, K. Kita, K. Kyuno, A. Toriumi

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引用次数: 0

摘要

本文讨论了一种可能的方法来实现更好的两个通道的场效应管性能，以及通道类型的确定机制。我们研究了n沟道的全氟戊烯(C22F14) (PF-pentacene)和p沟道fet的全氟戊烯(C22F14)。基于通道材料和S/D金属的能级考虑，我们展示了实现更好的OFET性能的系统指导方针

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance

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63rd Device Research Conference Digest, 2005. DRC '05.

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