利用重离子分析铁电随机存取存储器中的SEE模式

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984849

Jianan Wei, Hongxia Guo, Fengqi Zhang, G. Guo, Chaohui He

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引用次数: 1

摘要

研究了铁电随机存取存储器(FRAM)中的单事件效应，并用重离子分析了其误差模式。在高线性能量传递(LET)值的重离子辐照下，数据扰动以“0”~“1”扰动为主，其横截面比“1”~“0”扰动大一个数量级，且大多数扰动发生在全“1”误差模式(FFFFH)的地址中。此外，大多数干扰发生在涉及多个连续访问地址的事件中。随着LET的增加，连续访问地址超过10个的事件中数据乱序的百分比单调增加。

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Analysis of SEE modes in ferroelectric random access memory using heavy ions

The single event effects (SEE) in ferroelectric random access memories (FRAM) are investigated and the error modes are analyzed using heavy ions. Under the irradiation of heavy ions with high linear energy transfer (LET) values, data upsets are dominated by "0" to "1" upsets of which the cross section is larger than that of "1" to "0" upsets by an order of magnitude and most upsets are detected in addresses with the all "1" error pattern (FFFFH). In addition, most of the upsets occur in events that involve several consecutively accessed addresses. With the increase of ion LET, the percentage of the data upsets in events involving more than 10 consecutively accessed addresses increases monotonically.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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