基于物理的非准静态MOSFET模型，用于直流、交流和瞬态电路分析

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) Pub Date : 2004-05-16 DOI:10.1109/ICMEL.2004.1314611

T. Pesic, N. Jankovic

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引用次数: 2

摘要

在本文中，我们描述了SPICE的一个紧凑的基于物理的非准静态(NQS) MOST模型。通过与二维器件仿真结果的比较，表明新的NQS模型可以准确地预测直流、交流和瞬态运行时的最优行为。

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Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis

In this paper, we describe a compact physical-based non-quasi static (NQS) MOST model for SPICE. Based on the comparison with results of 2-D device simulations, it is shown that new NQS model can accurately predict NMOST behavior during DC, AC and transient operation.

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来源期刊

2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716)

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