用三角电压扫描观察40nm节点的移动离子

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898164

Clement Huang, James W. Liang, A. Juan, K. Su

{"title":"用三角电压扫描观察40nm节点的移动离子","authors":"Clement Huang, James W. Liang, A. Juan, K. Su","doi":"10.1109/IPFA.2014.6898164","DOIUrl":null,"url":null,"abstract":"Using the different test structures, we investigated the Triangular Voltage Sweep (TVS) variables, e.g. temperature, capacitor area & voltage sweep rate to observe the mobile ion in dielectric layer for Back-end process. We found that temperature 125°C could activate mobile ions. The amount of mobile ion is strongly correlated with tested topology. The amount of mobile ion is also dependent on the voltage sweep rate. Time-dependent dielectric breakdown (TDDB) lifetime will reduce 1 order when mobile ion concentration raise 1 order. It is extremely important to specify the reasonable dielectric area of test structure (intra-metal comb length) for both of TDDB and TVS.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The observation of mobile ion of 40nm node by Triangular Voltage Sweep\",\"authors\":\"Clement Huang, James W. Liang, A. Juan, K. Su\",\"doi\":\"10.1109/IPFA.2014.6898164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using the different test structures, we investigated the Triangular Voltage Sweep (TVS) variables, e.g. temperature, capacitor area & voltage sweep rate to observe the mobile ion in dielectric layer for Back-end process. We found that temperature 125°C could activate mobile ions. The amount of mobile ion is strongly correlated with tested topology. The amount of mobile ion is also dependent on the voltage sweep rate. Time-dependent dielectric breakdown (TDDB) lifetime will reduce 1 order when mobile ion concentration raise 1 order. It is extremely important to specify the reasonable dielectric area of test structure (intra-metal comb length) for both of TDDB and TVS.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用不同的测试结构，研究了三角电压扫描(TVS)变量，如温度、电容面积和电压扫描速率，以观察后端工艺中介电层中的移动离子。我们发现125°C的温度可以激活移动离子。移动离子的数量与测试的拓扑结构密切相关。移动离子的量也取决于电压扫描速率。随时间变化的介质击穿(TDDB)寿命随移动离子浓度的提高而降低一个数量级。对于TDDB和TVS来说，确定合理的测试结构介电面积(金属内梳长度)是非常重要的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The observation of mobile ion of 40nm node by Triangular Voltage Sweep

Using the different test structures, we investigated the Triangular Voltage Sweep (TVS) variables, e.g. temperature, capacitor area & voltage sweep rate to observe the mobile ion in dielectric layer for Back-end process. We found that temperature 125°C could activate mobile ions. The amount of mobile ion is strongly correlated with tested topology. The amount of mobile ion is also dependent on the voltage sweep rate. Time-dependent dielectric breakdown (TDDB) lifetime will reduce 1 order when mobile ion concentration raise 1 order. It is extremely important to specify the reasonable dielectric area of test structure (intra-metal comb length) for both of TDDB and TVS.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

自引率

0.00%

发文量