多值逻辑电路物理合成的cmos兼容三元器件平台

S. Shin, Esan Jang, Jae Won Jeong, K. Kim
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引用次数: 7

摘要

我们提出了一个可行的、可扩展的三重CMOS (T-CMOS)器件平台,用于完全兼容CMOS的多值逻辑(MVL)电路的物理合成。通过建立T-CMOS的紧凑模型,并用实验数据验证物理模型参数,提出了基于标准三元逆变器(STI)的T-CMOS设计框架,用于增强静态噪声裕度(SNM)和分析三元逻辑门的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS-Compatible Ternary Device Platform for Physical Synthesis of Multi-valued Logic Circuits
We propose the feasible and scalable ternary CMOS (T-CMOS) device platform for a fully CMOS-compatible physical synthesis of multi-valued logic (MVL) circuits. By developing the compact model of T-CMOS and verifying the physical model parameters with experimental data, the T-CMOS design framework based on standard ternary inverter (STI) is presented for static noise margin (SNM) enhancement and performance analysis of ternary logic gates.
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