具有RC米勒增益增强前馈补偿的低功率高带宽放大器

Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08) Pub Date : 2008-08-11 DOI:10.1145/1393921.1393972

Shagun Bajoria, V. Singh, Raju Kunde, C. Parikh

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引用次数: 0

摘要

针对高容性负载的低功率低压三级运放，提出了一种改进的频率补偿技术。该技术采用单RC米勒补偿和从输入到输出的直接增益增强前馈路径。该放大器负载电容为300 pF，在180 nm CMOS工艺下，直流增益为74 dB, 3db带宽为2.9 kHz，相位余量为52度，转换速率为0.22 V/μs，电源电压为1.2 V，功耗为0.24 mW。3db带宽是高增益三级CMOS放大器中报道的最高带宽之一。

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Low power high bandwidth amplifier with RC Miller and gain enhanced feedforward compensation

An improved frequency compensation technique is presented for low-power low-voltage three-stage operational amplifiers with high capacitive loads. The technique uses single RC Miller compensation and a direct gain enhanced feedforward path from the input to the output. With a load capacitance of 300 pF, the amplifier nominally achieves a dc gain of 74 dB, a 3-dB bandwidth of 2.9 kHz, a 52 degrees phase margin, and a slew rate of 0.22 V/μs, while consuming 0.24 mW of power with a 1.2-V supply voltage, in a 180 nm CMOS technology. The 3-dB bandwidth is one of the highest reported for a high-gain three-stage CMOS amplifier.

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Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)

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