CMOS闪存ADC的抗辐射技术

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) Pub Date : 2014-12-01 DOI:10.1109/ICECS.2014.7049906

U. Gatti, C. Calligaro, E. Pikhay, Y. Roizin

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引用次数: 13

摘要

这项工作提出了一种适用于空间应用的抗雷达4位10MHz闪存ADC。该转换器在架构和布局层面都采用了抗辐射技术。该设计考虑了在恶劣环境中可能损坏电路的辐射的不同影响。该ADC集成在TowerJazz的标准CMOS 0.18 μm技术中。原型机已经用一种定制的方法进行了测试，显示出高达300克拉的总剂量免疫。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation-hardened techniques for CMOS flash ADC

This work presents a rad-hard 4-bit 10MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300krad.

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来源期刊

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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