{"title":"采用半导体光放大器的三输入非与门","authors":"K. Mukherjee, A. Raja","doi":"10.1109/VLSIDCS47293.2020.9179931","DOIUrl":null,"url":null,"abstract":"In this paper, we proposed All optical NAND gate using polarization rotation in semiconductor optical amplifier (SOA). We have used Gaussian pulse as a control pulse and simulated the results using MATLAB. The change of extinction ratio (ER) with control and amplified emission noise (ASE) factor is investigated numerically. High value ER shows a clear distinction between low and high state of information.","PeriodicalId":446218,"journal":{"name":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Three Input NAND Gate Using Semiconductor Optical Amplifier\",\"authors\":\"K. Mukherjee, A. Raja\",\"doi\":\"10.1109/VLSIDCS47293.2020.9179931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we proposed All optical NAND gate using polarization rotation in semiconductor optical amplifier (SOA). We have used Gaussian pulse as a control pulse and simulated the results using MATLAB. The change of extinction ratio (ER) with control and amplified emission noise (ASE) factor is investigated numerically. High value ER shows a clear distinction between low and high state of information.\",\"PeriodicalId\":446218,\"journal\":{\"name\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIDCS47293.2020.9179931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS47293.2020.9179931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three Input NAND Gate Using Semiconductor Optical Amplifier
In this paper, we proposed All optical NAND gate using polarization rotation in semiconductor optical amplifier (SOA). We have used Gaussian pulse as a control pulse and simulated the results using MATLAB. The change of extinction ratio (ER) with control and amplified emission noise (ASE) factor is investigated numerically. High value ER shows a clear distinction between low and high state of information.