{"title":"硅基LPcvd Si/sub 3/N/sub 4/ SiO/sub 2/薄膜驻极体的性质","authors":"Mingzhou Zhao, Zhiqiang Huang, LinZhuang Sha, Zhen Xu","doi":"10.1109/ISE.1996.578061","DOIUrl":null,"url":null,"abstract":"By means of the technology of LPcvd and thermal oxidation the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer electret film was prepared on different doped silicon wafers. The experimental results show that the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer film possesses a good storage ability of negative charges after modifying the surface with HMDS, and all of the charges were almost trapped in the bulk of upper layer Si/sub 3/N/sub 4/ film. In addition, the TSD spectra of Si/sub 3/N/sub 4//SiO/sub 2/ film were influenced greatly by the differences of the dopants in the silicon wafers.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The properties of LPcvd Si/sub 3/N/sub 4//SiO/sub 2/ film electret based on silicon\",\"authors\":\"Mingzhou Zhao, Zhiqiang Huang, LinZhuang Sha, Zhen Xu\",\"doi\":\"10.1109/ISE.1996.578061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By means of the technology of LPcvd and thermal oxidation the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer electret film was prepared on different doped silicon wafers. The experimental results show that the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer film possesses a good storage ability of negative charges after modifying the surface with HMDS, and all of the charges were almost trapped in the bulk of upper layer Si/sub 3/N/sub 4/ film. In addition, the TSD spectra of Si/sub 3/N/sub 4//SiO/sub 2/ film were influenced greatly by the differences of the dopants in the silicon wafers.\",\"PeriodicalId\":425004,\"journal\":{\"name\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.1996.578061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The properties of LPcvd Si/sub 3/N/sub 4//SiO/sub 2/ film electret based on silicon
By means of the technology of LPcvd and thermal oxidation the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer electret film was prepared on different doped silicon wafers. The experimental results show that the Si/sub 3/N/sub 4//SiO/sub 2/ double-layer film possesses a good storage ability of negative charges after modifying the surface with HMDS, and all of the charges were almost trapped in the bulk of upper layer Si/sub 3/N/sub 4/ film. In addition, the TSD spectra of Si/sub 3/N/sub 4//SiO/sub 2/ film were influenced greatly by the differences of the dopants in the silicon wafers.
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