模拟使用多晶衬底对低成本III-V型光伏发电的影响

E. McClure, Z. Bittner, M. Slocum, D. Forbes, S. Hubbard
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引用次数: 4

摘要

最近对在多晶“虚拟”再结晶衬底上生长高效太阳能电池的兴趣需要了解衬底质量和生长成核特性的影响。本文研究了衬底材料、粗糙度和结晶度对砷化镓太阳能电池效率的影响。在单晶和多晶GaAs和Ge衬底上生长了各种器件,结果用于预测少数载流子扩散长度作为晶体晶粒尺寸,材料质量和成核缺陷密度的函数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling the effects of using polycrystalline substrates for low cost III–V photovoltaics
Recent interest in growing high efficiency solar cells on polycrystalline “virtual” recrystallized substrates requires an understanding of the impact of substrate quality and growth nucleation characteristics. This work provides a study on the effects of substrate material, roughness, and crystallinity on efficiency of a GaAs solar cell. A variety of devices were grown on both monocrystalline and polycrystalline GaAs and Ge substrates, and the results were used to predict minority carrier diffusion length as a function of crystal grain size, material quality, and nucleation defect densities.
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