基于电荷迁移的3D SONOS闪存可靠性分析

2020 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2020-04-01 DOI:10.1109/IRPS45951.2020.9128344

J. Jeong, Jae-Young Sung, Hee-Hun Yang, H. Lee, Ga-Won Lee

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引用次数: 0

摘要

本研究采用网格形式分析了三维SONOS闪存中电荷迁移引起的不稳定性。利用测试图分离了横向电荷迁移和垂直电荷迁移，并通过编程(或擦除)和保留重复测试分析了横向电荷迁移引起的平带电压位移。此外，通过提取电荷迁移的活化能，模拟了电荷迁移的机理。

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Reliability Analysis by Charge Migration of 3D SONOS Flash Memory

In this study, the instability caused by charge migration in 3D SONOS flash memory was analyzed using a mesh-shaped pattern. The lateral and vertical charge migration is separated using the test pattern, and the flat band voltage shift caused by the lateral charge migration is analyzed by program (or erase) and retention repetitive test. In addition, the mechanism of charge migration was modeled by extracting the activation energy of charge migration.

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2020 IEEE International Reliability Physics Symposium (IRPS)

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