SLC-ASM-HEMT:精确紧凑的SLCFET射频开关模型

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392941

S. Khandelwal, Brian Novak, Jordan Merkel, Ken A. Nagamatsu, J. Parke, Mark Yu, P. Shea, R. Howell

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引用次数: 0

摘要

提出了一种精确的紧凑模型，用于模拟超级点阵阵场效应晶体管的射频开关特性。新模型是通过修改行业标准ASM-HEMT紧凑型模型配方而开发的。研究发现，SLCFET的多通道导致该技术具有独特的I-V和s参数行为。通过对SLCFET中多通道器件静电的ASM-HEMT公式进行修正，得到了一个精确的、计算效率高的紧凑模型。该模型与直流和射频器件特性的测量结果非常吻合。

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SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch

Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formulations. It is found that multiple channels of SLCFET cause unique I-V and S-parameters behavior of this technology. An accurate, and computationally efficient compact model is obtained after modifying ASM-HEMT formulations for multi-channel device electrostatics in SLCFET. The model is shown to be in good agreement with measurements for DC and RF device characteristics.

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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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