M.T. Yang, D.C.W. Kuo, P. Ho, C. Kuo, T. Yeh, A. Chang, C.Y. Lee, Y. Chia, G. J. Chern, K.L. Young, D. Tang, J. Sun
{"title":"用于光学和无线应用的多种SiGe hbt的RF/模拟特性的研究","authors":"M.T. Yang, D.C.W. Kuo, P. Ho, C. Kuo, T. Yeh, A. Chang, C.Y. Lee, Y. Chia, G. J. Chern, K.L. Young, D. Tang, J. Sun","doi":"10.1109/BIPOL.2004.1365752","DOIUrl":null,"url":null,"abstract":"Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications\",\"authors\":\"M.T. Yang, D.C.W. Kuo, P. Ho, C. Kuo, T. Yeh, A. Chang, C.Y. Lee, Y. Chia, G. J. Chern, K.L. Young, D. Tang, J. Sun\",\"doi\":\"10.1109/BIPOL.2004.1365752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications
Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.
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