IC calibration kits and de-embedding techniques for sub-mm-wave device characterization

In this paper, we describe a design and characterization flow to accurately extract the performance of high-speed devices, integrated in Silicon-based technologies. An EM-based technique to accurately derive the characteristic impedance of transmission lines embedded in lossy and multilayered substrates, is described. Further, this technique is employed to characterize lower metal levels transmission lines (i.e., M1) enabling to employ a direct calibration/de-embedding approach to properly define the measurement reference plane at the intrinsic device terminals, though a TRL based technique. Finally, the proposed calibration/de-embedding approach is employed to benchmark the performance of a SiGe HBT versus the HiCUM L2 predictions.