双向降压变换器中SiC二极管封装的汽车级TO-247 IGBT的性能评估

L. Abbatelli, M. Cacciato, Domenico Paternostro, S. Rizzo, G. Scarcella, G. Scelba
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引用次数: 0

摘要

各种可持续移动应用采用双向dc-dc转换器,以优化管理电源,负载和电池之间的功率流。在这种情况下,从效率和可靠性的角度来看,使用碳化硅(SiC)技术具有许多优势。用SiC二极管封装分立IGBT可以在比标准器件更高的开关频率下工作。在这项工作中,在双向buck变换器中,将汽车级TO-247 IGBT与SiC二极管封装的标准IGBT进行了比较。实验结果表明,在相同的开关频率和温度条件下,前者可以处理相对于与Si二极管封装的igbt的额外负载,或者在等于负载时具有更好的效率。本工作的主要优点是突出了在最近市场上的实际设备中采用反并联SiC二极管的优点,而不是使用以前论文采用的原型。此外,还值得注意的是,这些原型不是汽车级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Assessment of an Automotive-grade TO-247 IGBT copacked with SiC diode in a bidirectional buck converter
Various sustainable mobility applications adopt bidirectional dc-dc converters to optimally manage the power flow among the power supply, the load and the battery. In this context, the use of Silicon Carbide (SiC) technologies leads many advantages from efficiency and reliability point of view. Copacking the discrete IGBT with SiC diode enables to operate at switching frequency higher than the standard devices. In this work, an automotive-grade TO-247 IGBT copacked with SiC diode has been compared with a standard one, in a bidirectional buck-converter. The experimental results have highlighted that, under the same switching frequency and temperature conditions, the former can handle an extra load with respect to the IGBTs copacked with Si diodes, or a better efficiency being equal the load. The main merit of the work is to highlight the advantages of adopting antiparallel SiC diode in an actual device recently available in the market instead of using the prototypes adopted by previous papers. Moreover, it is also worth to note that these prototypes are not automotive grade.
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