VLSI故障仿真方法研究

J. Hayes
{"title":"VLSI故障仿真方法研究","authors":"J. Hayes","doi":"10.1145/800263.809235","DOIUrl":null,"url":null,"abstract":"Some deficiencies of existing simulators in the context of VLSI design and testing are considered. A fault simulation approach based on CSA (connector-switch-attenuator) theory is defined which overcomes many of these deficiencies. The CSA circuit elements and logic values needed to model combinational circuits are described and applied to the analysis of various types of MOS circuits. A charge-storage element called a well is introduced to simulate sequential behavior. It is shown that many fault types, including stuck-line faults, short circuits, open circuits, and delay faults can be modeled in a uniform and efficient manner.","PeriodicalId":290739,"journal":{"name":"19th Design Automation Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A Fault Simulation Methodology for VLSI\",\"authors\":\"J. Hayes\",\"doi\":\"10.1145/800263.809235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Some deficiencies of existing simulators in the context of VLSI design and testing are considered. A fault simulation approach based on CSA (connector-switch-attenuator) theory is defined which overcomes many of these deficiencies. The CSA circuit elements and logic values needed to model combinational circuits are described and applied to the analysis of various types of MOS circuits. A charge-storage element called a well is introduced to simulate sequential behavior. It is shown that many fault types, including stuck-line faults, short circuits, open circuits, and delay faults can be modeled in a uniform and efficient manner.\",\"PeriodicalId\":290739,\"journal\":{\"name\":\"19th Design Automation Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th Design Automation Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/800263.809235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th Design Automation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/800263.809235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

从超大规模集成电路设计和测试的角度分析了现有仿真器的不足之处。提出了一种基于连接开关衰减器(CSA)理论的故障仿真方法,克服了上述缺陷。描述了组合电路建模所需的CSA电路元件和逻辑值,并将其应用于各种类型MOS电路的分析。引入一种称为阱的电荷存储元件来模拟顺序行为。结果表明,许多类型的故障,包括卡线故障、短路、开路和延迟故障,都可以统一有效地建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fault Simulation Methodology for VLSI
Some deficiencies of existing simulators in the context of VLSI design and testing are considered. A fault simulation approach based on CSA (connector-switch-attenuator) theory is defined which overcomes many of these deficiencies. The CSA circuit elements and logic values needed to model combinational circuits are described and applied to the analysis of various types of MOS circuits. A charge-storage element called a well is introduced to simulate sequential behavior. It is shown that many fault types, including stuck-line faults, short circuits, open circuits, and delay faults can be modeled in a uniform and efficient manner.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信