一个输出功率为14dbm的162ghz功率放大器

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2016-09-01 DOI:10.1109/BCTM.2016.7738965

Jidan Al-Eryani, H. Knapp, J. Wursthorn, K. Aufinger, S. Majied, Hao Li, S. Boguth, R. Lachner, J. Bock, L. Maurer

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引用次数: 17

摘要

设计了一种在162GHz频率下具有14dBm饱和输出功率、29.5 dB小信号增益和4.8%功率附加效率的三级功率放大器。在155 ~ 165 GHz范围内，Psat保持在12.5 dBm以上，而小信号增益在35.4 ~ 28.3 dB之间变化。最大输出功率和增益性能是通过使用差分级联编码拓扑和操作晶体管远超过其开基极集电极-发射极击穿电压(BVCEO)，并通过优化匹配PA的三级来获得的。据我们所知，这是超过150 GHz的硅基PA的最高输出功率。该芯片采用130纳米SiGe BiCMOS技术制造，fT/fmax = 250/370 GHz。

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A 162 GHz power amplifier with 14 dBm output power

A 3-stage power amplifier (PA) with 14dBm saturated output power (Psat), 29.5 dB small-signal gain, and 4.8% power-added efficiency (PAE) at a frequency of 162GHz is presented. From 155 to 165 GHz, Psat remains higher than 12.5 dBm, while the small-signal gain varies from 35.4 dB to 28.3 dB. Maximum output power and gain performance are obtained by using a differential cascode topology and operating the transistors well beyond their open-base collector-emitter breakdown voltage (BVCEO), and by optimum matching of the three stages of the PA. To our best knowledge, this is the highest reported output power for a sillicon-based PA beyond 150 GHz. The chip is fabricated in a 130nm SiGe BiCMOS technology with fT/fmax = 250/370 GHz.

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2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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