在100mm InP衬底上的0.1 μm pt下凹栅InP HEMT低噪声放大器的高可靠性性能

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516184

Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block

{"title":"在100mm InP衬底上的0.1 μm pt下凹栅InP HEMT低噪声放大器的高可靠性性能","authors":"Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block","doi":"10.1109/ICIPRM.2010.5516184","DOIUrl":null,"url":null,"abstract":"Accelerated temperature lifetesting at T<inf>channel</inf> of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10<sup>8</sup> hours at T<inf>channel</inf> of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates\",\"authors\":\"Y. Chou, D. Leung, M. Biedenbender, D. Eng, D. Buttari, X. Mei, C. H. Lin, R. Tsai, R. Lai, M. Barsky, M. Wojtowicz, A. Oki, T. Block\",\"doi\":\"10.1109/ICIPRM.2010.5516184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated temperature lifetesting at T<inf>channel</inf> of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10<sup>8</sup> hours at T<inf>channel</inf> of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在100 mm InP衬底上制备了0.1 μm pt凹陷InP HEMT低噪声放大器，在240、255和270°C的Tchannel下进行了加速温度寿命测试。在35 GHz时，基于ΔS21 <−1 dB对可靠性性能进行评估。寿命测试结果显示，在125°C的Tchannel下，活化能约为1.8 eV，寿命预测的可靠性为99%，置信度为90%，超过1×108小时。在100mm InP衬底上的0.1 μm pt下凹栅InP HEMT低噪声放大器的高可靠性演示对于需要高可靠性性能的先进军事/空间应用至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Accelerated temperature lifetesting at Tchannel of 240, 255, and 270 °C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 < −1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1×10⁸ hours at Tchannel of 125 °C. The high reliability demonstration of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates is essential for advanced military/space applications requiring high reliability performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量