{"title":"匹配电路调谐，多频段(WLAN和WiMAX)， A级功率放大器，采用0.25μm-SiGe HBT技术","authors":"M. Kaynak, I. Tekin, Y. Gurbuz","doi":"10.1109/RME.2008.4595752","DOIUrl":null,"url":null,"abstract":"In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of this PA. The behavior of the amplifier has been optimized for 2.4 GHz (WLAN), 3.6 GHz (UWB-WiMAX) and 5.4 GHz (WLAN) frequency bands for high output power. Multi-band characteristic of the amplifier was obtained by using MOS based switching network. Two MOS switches are used for changing the behavior of the matching network and 4 possible states are achieved. Post-Layout simulation results of the PA circuit provided the following performance parameters: output power of 28-dBm, gain value of 26-dB and efficiency value of %19 for the 2.4 GHz WLAN band, output power of 28-dBm, gain value of 22-dB and efficiency value of %20 for the 3.6 GHz UWB-WiMAX band, and output power of 27-dBm, gain value of 23-dB and efficiency value of %17 for the 5.4 GHz WLAN band.","PeriodicalId":140550,"journal":{"name":"2008 Ph.D. Research in Microelectronics and Electronics","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A matching circuit tuned, multi-band (WLAN and WiMAX), Class — a power amplifier using 0.25μm-SiGe HBT technology\",\"authors\":\"M. Kaynak, I. Tekin, Y. Gurbuz\",\"doi\":\"10.1109/RME.2008.4595752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of this PA. The behavior of the amplifier has been optimized for 2.4 GHz (WLAN), 3.6 GHz (UWB-WiMAX) and 5.4 GHz (WLAN) frequency bands for high output power. Multi-band characteristic of the amplifier was obtained by using MOS based switching network. Two MOS switches are used for changing the behavior of the matching network and 4 possible states are achieved. Post-Layout simulation results of the PA circuit provided the following performance parameters: output power of 28-dBm, gain value of 26-dB and efficiency value of %19 for the 2.4 GHz WLAN band, output power of 28-dBm, gain value of 22-dB and efficiency value of %20 for the 3.6 GHz UWB-WiMAX band, and output power of 27-dBm, gain value of 23-dB and efficiency value of %17 for the 5.4 GHz WLAN band.\",\"PeriodicalId\":140550,\"journal\":{\"name\":\"2008 Ph.D. Research in Microelectronics and Electronics\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Ph.D. Research in Microelectronics and Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2008.4595752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Ph.D. Research in Microelectronics and Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2008.4595752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A matching circuit tuned, multi-band (WLAN and WiMAX), Class — a power amplifier using 0.25μm-SiGe HBT technology
In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of this PA. The behavior of the amplifier has been optimized for 2.4 GHz (WLAN), 3.6 GHz (UWB-WiMAX) and 5.4 GHz (WLAN) frequency bands for high output power. Multi-band characteristic of the amplifier was obtained by using MOS based switching network. Two MOS switches are used for changing the behavior of the matching network and 4 possible states are achieved. Post-Layout simulation results of the PA circuit provided the following performance parameters: output power of 28-dBm, gain value of 26-dB and efficiency value of %19 for the 2.4 GHz WLAN band, output power of 28-dBm, gain value of 22-dB and efficiency value of %20 for the 3.6 GHz UWB-WiMAX band, and output power of 27-dBm, gain value of 23-dB and efficiency value of %17 for the 5.4 GHz WLAN band.
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