非对称栅氧化物对Si和Si1−xGex双栅隧道场效应管栅漏重叠的影响

2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) Pub Date : 1900-01-01 DOI:10.1109/VLSI-SATA.2016.7593036

S. Poorvasha, B. Lakshmi

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引用次数: 1

摘要

本文研究了非对称栅极氧化物对Si和Si1-xGex基双栅(DG)隧道场效应管(tfet)栅漏重叠的影响。本文首次在栅极-漏极重叠处引入非对称栅极氧化物，并与DG tfet进行了比较。针对不同的摩尔分数(x)值，优化Si1-xGex以获得ON电流(ION)增强。基于Si1-xGex的栅极-漏极重叠的DG tfet提供了232 μA的极好的离子，亚阈值摆幅(SS)为26 mV/dec。这是由于Si1-xGex源侧电子的高隧穿率而实现的。

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Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGex double gate tunnel FETs

This paper studies the performance of asymmetric gate oxide on gate-drain overlap for Si and Si_1-xGe_x based double gate (DG) Tunnel FETs (TFETs). For the first time, asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. For the different values of the mole fraction (x), Si_1-xGe_x is optimized to get ON current (I_ON) enhancement. Si_1-xGe_x based DG TFETs with gate-drain overlap offers a very good I_ON of 232 μA with the subthreshold swing (SS) of 26 mV/dec. This is achieved because of the high tunneling rate of electrons occurring at the source side of Si_1-xGe_x.

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2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA)

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